The Tunnel diode exhibits a special characteristic known as negative resistance.This feature makes it useful in oscillator and microwave amplifier application.
The tunnel diodes are constructed with germanium or gallium arsenide by doping the p and n region.The heavy doping results in a very narrow depletion region.
The forward voltage begins to develop a barrier, and current begins to decrease as the forward voltage continuous to increase .This is the negative resistance region,
RF= ∆VF/∆IF
This effect is ohm's law where an increase in voltage results in an increase in current.
0 comments:
Post a Comment